As shown in Figure 4b, by increasing the stress, the peak shifted from 855.46 to 847.43 nm. I-V characterizations of the RTD GSK2879552 supplier on the GaAs-on-Si substrate were done. The I-V characteristics of the GaAs-on-Si substrate and the RTD are shown in Figure 5. From the I-V characterizations, a clear shift after a stress of 438.2 MPa was measured, as shown in Figure 5. Figure 5 I – V characterizations of the RTD with different stresses. By calculating the piezoresistive coefficient with Equation 2, it can be concluded that the piezoresistive coefficient of the RTD on the GaAs-on-Si substrate was in the range
of 3.42 × 10−9 to 6.85 × 10−9 m2/N, which is about one order of magnitude higher than the Si-based semiconductor piezoresistors. Conclusions In conclusion, we present a method to fabricate GaAs-based RTD on Si substrate. Due to high sensitivity to external stress, GaAs has a much higher piezoresistive coefficient than Si-based piezoresistors. Combining with RTD, the piezoresistive high throughput screening assay coefficient has reached more than one order of magnitude higher than Si. This work has combined the high strain sensitivity of GaAs-based RTD with the Si substrate. This will further provide us a possibility to develop some high-performance MEMS sensors. Authors’ information JL (Jie Li) was born in 1976 in Shanxi, China. He received his Ph.D. in physics from the Beijing
Institute of Technology, Beijing, China in 2005. He has published papers on topics including semiconductor materials, devices, and MEMS sensors. His current research Quinapyramine interests include MEMS sensors and semiconductor physics. HG was born in 1987 in Shanxi, China. He is a graduate student at the School of Electronics and Computer Science and Technology, North University of China. His current research
is focused on the field of semiconductor materials. JL (Jun Liu) was born in 1968 in the Inner Mongolia Autonomous Region, People’s Republic of China. He received his Ph.D. degree from Beijing Institute of Technology, Beijing, China in 2001 and worked as a postdoctoral researcher in Peking University from 2003 to 2007. His research interests focus on MEMS and MIMU. As the team leader, he has worked on around 20 different projects funded by the National ‘863’ Project, National Nature Funds, National 973 Project, etc. He is now working as the director of The Ministry of Education Key Laboratory for Instrumentation Science & Dynamic Measurement at the North China Institute of MK 8931 supplier Technology and the secretary general of Chinese Academy of Ordnance Industry. JT received his Ph.D. from the National Technical University of Athens. He is now working in the Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education.