A commercial (purity 99.99%) target (Testbourne, Basingstoke, UK) composed of ZnO/Al2O3 (2 wt.%) was used for deposition of AZO films at RT and at an optimized angle of 50°. During film growth, the argon
gas flow rate was maintained at 30 sccm, resulting in the working pressure of 5 × 10-3 mbar. The distance from the sample to the target was 10 cm, and the pulsed dc power was maintained at 100 W. Figure 1 shows a schematic Selleck HDAC inhibitor representation of the process flow towards the synthesis of nanofaceted silicon, and the growth of AZO HSP990 cost overlayer on the same thicknesses (in the range of 30 to 90 nm) was measured by using a surface profilometer (XP-200, Ambios Technology, Santa Cruz, CA, USA). Field emission scanning electron microscopy (SEM) (CarlZeiss, Oberkochen, Germany) was employed to study the sample microstructures and to ensure the uniformity of the structures. Sample morphologies were studied by using an atomic force microscope (AFM) (MFP3D, Asylum Research, Santa Barbara, CA, USA) in the tapping mode. AFM images were analyzed by using WSxM and Gwyddion softwares [14, 15]. Crystallinity and phase identification of the films were investigated by X-ray diffraction (XRD) (D8-Discover, Bruker, Karlsruhe, Germany),
whereas click here the optical reflectance measurements were carried out by using a UV-Vis-NIR spectrophotometer (3101PC, Shimadzu, Kyoto, Japan) in the wavelength range of 300 to 800 nm with unpolarized light. A specular geometry was used for these measurements where the incident light fell on the target at an angle of 45° with respect to the surface normal. Photoresponsivity studies were performed using a spectral response system (Sciencetech, Ontario, Canada) under air mass 0 and 1 sun illumination conditions in the spectral range of 300 to 800 nm. The incident light power was measured with a calibrated silicon
photodiode at wavelengths below 1,100 nm, and the spectra were normalized to the power. Figure 1 Flow chart for ionbeam fabrication of nanofaceted Si followed by conformal growth of AZO films. Results and discussion Figure 2a shows the SEM image of a typical ion beam-fabricated silicon template under consideration, manifesting distinct faceted morphology with striations Tenoxicam on its walls. Corresponding AFM image, shown in Figure 2b, indicates that the Si facets are oriented in the direction of incident ion beam. Analysis of this image provides rms roughness value of 52.5 nm, whereas the average silicon facet height turns out to be approximately 180 nm [14]. Two-dimensional (2D) fast Fourier transform (FFT) image, obtained by using Gwyddion software, is depicted in the inset of Figure 2b where a clear anisotropy in the surface morphology is visible along the direction perpendicular to the ion beam projection onto the surface [15].